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FJT44
FJT44
High Voltage Transistor
1 SOT-223
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings Ta=25C unless otherwise noted
Symbol VCBO VCEO VEBO IC PC TJ Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Dissipation (TC=25C) Junction Temperature
1.Base
2.Collector
3.Emitter
Value 500 400 6 300 2 150
Units V V V mA W C
TSTG
Storage Temperature
-55 ~ 150
C
Electrical Characteristics Ta=25C unless otherwise noted
Symbol BVCBO BVCEO BVEBO ICBO ICES IEBO hFE Parameter Collector-Base Breakdown Voltage * Collector -Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-off Current Collector Cut-off Current Emitter Cut-off Current * DC Current Gain Test Condition IC=100A, IB=0 IC=1mA, IB=0 IE=100A, IC=0 VCB=400V, IE=0 VCE=400V, IB=0 VEB=4V, IC=0 VCE=10V, IC=1mA VCE=10V, IC=10mA VCE=10V, IC=50mA VCE=10V, IC=100mA IC=1mA, IB=0.1mA IC=10mA, IB=1mA IC=50mA, IB=5mA IC=10mA, IB=1mA VCB=20V, IE=0, f=1MHz 40 50 45 40 Min. 500 400 6 0.1 0.5 0.1 200 Max. Units V V V A A A
VCE (sat)
* Collector-Emitter Saturation Voltage
0.4 0.5 0.75 0.75 7
V V V V pF
VBE (sat) Cob
* Base-Emitter Saturation Voltage Output Capacitance
* Pulse Test: PW300s, Duty Cycle2%
(c)2002 Fairchild Semiconductor Corporation
Rev. A3, August 2002
FJT44
Typical Characteristics
160
10
VCE=10V
140 120
hFE, DC CURRENT GAIN
VCC=150V IC/IB=10 o Ta=25 C VBE(off)=4V
100
60 40 20 0 -20 -40 1 10 100 1000 10000
t[us], TIME
80
1
tf td
0.1 1 10 100
IC[mA], COLLECTOR CURRENT
IC[mA], COLLECTOR CURRENT
Figure 1. DC current Gain
Figure 2. Turn-On Switching Times
100
1000
10
Cib[pF],Cob[pF], CAPACITANCE
VCC =150V IC /IB=10 Ta=25
Ta=25 C f=1MHz
o
100
t[us], TIME
Cib
ts
1
10
Cob
tf
0.1 1 10 100
1 0.1
1
10
100
1000
IC[mA], COLLECTOR CURRENT
VCB[V], COLLECTOR-BASE VOLTAGE
Figure 3. Turn-Off Switching Times
Figure 4. Capacitance
1.0
0.5
Ta=25 C
0.8
VCE[V] COLLECTOR EMITTER VOLTAGE
o
IC=1mA
0.4
IC=10mA
IC=50mA
Ta=25 c
o
VBE(sat) @IC/IB=10
[V], VOLTAGE
0.6
0.3
VBE(on) @VCE=10V
0.4
0.2
0.2
VCE(sat)@IC/IB=10
0.1
0.0 0.1
1
10
100
1000
0.0 10
100
1000
10000
100000
IC[mA], COLLECTOR CURRENT
IC[mA], COLLECTOR CURRENT
Figure 5. On Voltage
Figure 6. Collector Saturation Region
(c)2002 Fairchild Semiconductor Corporation
Rev. A3, August 2002
FJT44
Typical Characteristics (Continued)
100
hFE, SMALL SIGNAL CURRENT GAIN
VCE=10V f=10MHz o Ta=25 C
10
1
0.1 0.1
1
10
100
1000
IC[mA], COLLECTOR CURRENT
Figure 7. High Frequency Current Gain
(c)2002 Fairchild Semiconductor Corporation
Rev. A3, August 2002
FJT44
Package Dimensions
SOT-223
0.08MAX
3.00 0.10
MAX1.80
1.75 0.20
3.50 0.20
(0.60)
0.65 0.20
+0.04
0.06 -0.02
2.30 TYP (0.95) 4.60 0.25
0.70 0.10 (0.95)
+0.10 0.25 -0.05
(0.60)
0~
10
1.60 0.20
(0.46)
(0.89)
6.50 0.20
Dimensions in Millimeters
(c)2002 Fairchild Semiconductor Corporation Rev. A3, August 2002
7.00 0.30
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks.
ACExTM FACTTM ActiveArrayTM FACT Quiet seriesTM BottomlessTM FAST(R) FASTrTM CoolFETTM CROSSVOLTTM FRFETTM GlobalOptoisolatorTM DOMETM EcoSPARKTM GTOTM E2CMOSTM HiSeCTM EnSignaTM I2CTM Across the board. Around the world.TM The Power FranchiseTM Programmable Active DroopTM DISCLAIMER
ImpliedDisconnectTM ISOPLANARTM LittleFETTM MicroFETTM MicroPakTM MICROWIRETM MSXTM MSXProTM OCXTM OCXProTM OPTOLOGIC(R) OPTOPLANARTM
PACMANTM POPTM Power247TM PowerTrench(R) QFETTM QSTM QT OptoelectronicsTM Quiet SeriesTM RapidConfigureTM RapidConnectTM SILENT SWITCHER(R) SMART STARTTM
SPMTM StealthTM SuperSOTTM-3 SuperSOTTM-6 SuperSOTTM-8 SyncFETTM TinyLogicTM TruTranslationTM UHCTM UltraFET(R) VCXTM
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY
FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. 2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness.
PRODUCT STATUS DEFINITIONS Definition of Terms
Datasheet Identification Advance Information Product Status Formative or In Design First Production Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only.
Preliminary
No Identification Needed
Full Production
Obsolete
Not In Production
(c)2002 Fairchild Semiconductor Corporation
Rev. I1

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